Large Goos-Hanchen shifts from an asymmetric configuration with single-negative materials due to surface polariton resonance

Yuanjiang Xiang; Xiaoyu Dai; Shuangchun Wen

doi:10.1117/12.687533

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6 October 2006 Large Goos-Hänchen shifts from an asymmetric configuration with single-negative materials due to surface polariton resonance

Yuanjiang Xiang, Xiaoyu Dai, Shuangchun Wen

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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63522N (2006) https://doi.org/10.1117/12.687533
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

We investigate the Goos-Hanchen (GH) shifts from an asymmetric configuration with single-negative materials by means of the stationary phase theory. The transmission and reflection coefficients for both TE- and TM-polarized incident beams are obtained using the transfer matrix method. A large GH shift was observed in the asymmetric configuration with single-negative materials when the surface polariton is properly excited for the TM polarization. The GH shift of the reflected beam is not equal to that of the transmitted beam. Furthermore, it is found that there is an optimum thickness and an optimum incident angle for the maximum GH shift time. The GH shift of the reflected beam can be detectable due to its large value and high reflectivity.

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Yuanjiang Xiang, Xiaoyu Dai, and Shuangchun Wen "Large Goos-Hänchen shifts from an asymmetric configuration with single-negative materials due to surface polariton resonance", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63522N (6 October 2006); https://doi.org/10.1117/12.687533

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