6 October 2006 Modelling of MSM photodetectors using RF measurement technique
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63523M (2006) https://doi.org/10.1117/12.691452
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
A multi-giga bits circuit-level model of a thin film metal-semiconductor-metal photodetector (MSM PD) for high speed optical receiver (Rx) was obtained using the RF measurement technique and widely used optimization routines in simulation tool such as ADS and SPICE. On-wafer measurement-based modeling technique was employed to exactly characterize DUTs in this paper. On-wafer calibration standard structures such as NiCr 50 Ω of load, short, and open were also fabricated and optimized using laser trimming for exact measurements. The obtained circuit-level model shows good agreement with measured s-parameters and wide eye open up to 20Gbps.
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Cheolung Cha, Cheolung Cha, Zhaoran Huang, Zhaoran Huang, "Modelling of MSM photodetectors using RF measurement technique", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63523M (6 October 2006); doi: 10.1117/12.691452; https://doi.org/10.1117/12.691452

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