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21 September 2006 Thermal simulation studies of high-power light-emitting diodes
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Proceedings Volume 6355, Advanced LEDs for Solid State Lighting; 63550D (2006) https://doi.org/10.1117/12.691605
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
We showed a detailed thermal simulation of an Epi-down flip-chip packaged LED. Simulation results show that chip attachment defects can cause significant thermal gradients across the active layer of chip, leading to premature failures.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. F. Fan, Y. Zhao, Y. L. Xian, and G. Wang "Thermal simulation studies of high-power light-emitting diodes", Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550D (21 September 2006); doi: 10.1117/12.691605; https://doi.org/10.1117/12.691605
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