28 September 2006 The effect of processes on the reliability of GaN-based light emitting diodes
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Proceedings Volume 6355, Advanced LEDs for Solid State Lighting; 63550K (2006); doi: 10.1117/12.691155
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
According to our rich experiences on manufacturing of high reliability GaN based Light Emitting Diodes, we try to expatiate the relations between processes and device reliability on five aspects in this paper. In addition, we lay out some of our solutions on the five aspects and show our stable device.
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Zhiguo Xiao, Xiaoguang He, Kevin Ma, Xiangdong Chen, Shengli Wu, Zhijie Ke, "The effect of processes on the reliability of GaN-based light emitting diodes", Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550K (28 September 2006); doi: 10.1117/12.691155; https://doi.org/10.1117/12.691155
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KEYWORDS
Gallium nitride

Light emitting diodes

Electrodes

Aluminum

Oxygen

Reliability

Annealing

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