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12 October 2006 MOS Si/Ge photodetectors
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 636806 (2006) https://doi.org/10.1117/12.684994
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
The Si metal-oxide-semiconductor structure can be used for light detection, and the dark current is significantly reduced with the oxide layer. With the photo excitation, the generated carriers can be collected by electrodes as photo current. By incorporating Ge, the metal-oxide-semiconductor photodetectors can increase the responsivity and extend the detection wavelength. The interband transitions in the SiGe quantum dots enhance the 820 nm infrared absorption and extend the detection range to 1550nm. The valence band offset between Si and SiGe forms discrete quantum states in the SiGe layers. Hence, metal-oxide-semiconductor SiGe/Si quantum dot (well) infrared photodetectors can be used to detect midand far- infrared using the intraband transitions. The Ge-on-insulator metal-oxide-semiconductor photodetectors can further increase the detection speed by reducing parasitic capacitance. The large work function metal (Pt) is used for the gate electrode to reduce the dark current. Moreover, the external mechanical strain can enhance the photo current with slight degradation of dark current.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C.-H. Lin and C. W. Liu "MOS Si/Ge photodetectors", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636806 (12 October 2006); https://doi.org/10.1117/12.684994
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