12 October 2006 Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 63680D (2006) https://doi.org/10.1117/12.686830
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
In a radical departure from conventional thermal emitter-based dynamic IR scene simulation devices, we have tested InAsSbP/InAs LEDs grown by liquid phase epitaxy and tuned at several peak-emitting wavelengths inside the mid-IR band. Light uniformity, radiation apparent temperature (Ta), thermal resistance, and self heating details were characterized at T=300°K in the microscale by calibrated infrared cameras in the 3-5 μm (light pattern) and 8-12 μm (heat pattern) bands. We show that LEDs are capable of simulating very hot (Ta ≥740°K) targets as well as cold objects and low observable with respect to a particular background. We resume that cost effective LEDs enable a platform for photonic scene projection devices able to compete with thermal microemitter MEMS technology in testing and stimulating very high-speed infrared sensors used for military and commercial applications. Proposals on how to further increase LEDs performance are given.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Malyutenko, V. Malyutenko, A. Zinovchuk, A. Zinovchuk, } "Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 63680D (12 October 2006); doi: 10.1117/12.686830; https://doi.org/10.1117/12.686830
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