19 October 2006 Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 63680X (2006) https://doi.org/10.1117/12.685124
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
An analysis of the mode structure of high-power double-barrier separate confinement DB SCH diode lasers is presented. The devices are characterized by very low vertical beam divergence (13 - 22°, depending on the design version). Modelling of the fundamental mode distribution for three different design versions of DB SCH diode lasers is discussed and the results are compared to a macroscopic characterization of the devices (far-field directional characteristics and photocurrent spectra). Microscopic measurements of the near field distribution of these diode lasers with subwavelength spatial resolution are performed by employing a Near-field Photocurrent (NPC) technique. The mode structure of diode lasers is directly visualized giving indications about the interplay between the heterostructure design and the emission characteristics.
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Anna Kozlowska, Anna Kozlowska, Andrzej Maląg, Andrzej Maląg, Robert Pomraenke, Robert Pomraenke, Julien Renard, Julien Renard, Christoph Lienau, Christoph Lienau, } "Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 63680X (19 October 2006); doi: 10.1117/12.685124; https://doi.org/10.1117/12.685124
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