13 October 2006 Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 636813 (2006) https://doi.org/10.1117/12.685910
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with Al0.2Ga0.8N or AlInGaN electronic blocking layers have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the AlInGaN electronic blocking layer. When the aluminum and indium compositions in AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between InGaN barrier and AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with conventional Al0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.
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Shu-Hsuan Chang, Shu-Hsuan Chang, Jun-Rong Chen, Jun-Rong Chen, Chung-Hsien Lee, Chung-Hsien Lee, Cheng-Hong Yang, Cheng-Hong Yang, } "Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636813 (13 October 2006); doi: 10.1117/12.685910; https://doi.org/10.1117/12.685910
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