13 October 2006 Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 636814 (2006) https://doi.org/10.1117/12.685959
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K~350 K, 300 K~330 K, and 330 K~350 K, respectively.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bo-Ting Liou, Bo-Ting Liou, Sheng-Horng Yen, Sheng-Horng Yen, Ming-Wei Yao, Ming-Wei Yao, Mei-Ling Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yen-Kuang Kuo, Shu-Hsuan Chang, Shu-Hsuan Chang, } "Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636814 (13 October 2006); doi: 10.1117/12.685959; https://doi.org/10.1117/12.685959

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