Paper
13 October 2006 Antireflection coating for photo-pumped IV-VI semiconductor light-emitting devices
D. Ray, Z. P. Guan, F. Zhao, S. Jain, S. Mukherjee, D. Li, Z. Shi
Author Affiliations +
Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 636816 (2006) https://doi.org/10.1117/12.686486
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
An antireflection coating material for optically pumped group IV-VI lead-chalcogenide semiconductor light emitting devices has been proposed. The coating has been used to increase the photo-pumping efficiency. Theoretical model showed that with the proposed AR coating with a quarter wavelength thickness, 0.008% reflectivity could be achieved in the 980nm-982nm wavelength region. The antireflection property of the coated film was investigated by FTIR-spectroscopic reflectance measurement. Room temperature continuous-wave photoluminescence measurement from AR-coated multiple quantum well structures showed up to 4-times increment in the PL intensity, compared to uncoated ones.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Ray, Z. P. Guan, F. Zhao, S. Jain, S. Mukherjee, D. Li, and Z. Shi "Antireflection coating for photo-pumped IV-VI semiconductor light-emitting devices", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636816 (13 October 2006); https://doi.org/10.1117/12.686486
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KEYWORDS
Coating

Reflectivity

Antireflective coatings

Group IV-VI semiconductors

Quantum wells

Refractive index

Luminescence

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