13 October 2006 ZnCdSeTe radiation detectors
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 636817 (2006) https://doi.org/10.1117/12.686584
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
Group II-VI narrow band gap compounds CdTe, ZnCdTe and CdSeTe are known as the most suitable semiconductor materials for the room temperature γ- and X-ray detectors. In this work, electronic properties of a quadrupole compound ZnCdSeTe were investigated. Chlorine, copper and oxygen doped host material was synthesized from the grinded mixture of 2 mol% ZnTe, 36 mol% CdTe, and 62 mol% CdSe, to keep a hexagonal structure of crystals. Precautions were applied to achieve an uniform doping, high quality of the crystal surfaces, and to remove residue phases after the thermal treatments. Fabricated polycrystalline samples showed a high performance from NIR via VIS and UV to X-ray band, with sharp donor-acceptor pair peak at 922 nm, and dynamic range above 104. High stability, good linearity and performance of samples was measured using X-ray source with Cu-anode, at 40 kV.
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Vello Valdna, Jaan Hiie, Marek Strandberg, Rainer Traksmaa, Mart Viljus, "ZnCdSeTe radiation detectors", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636817 (13 October 2006); doi: 10.1117/12.686584; https://doi.org/10.1117/12.686584
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