19 October 2006 A nanotube-on-insulator (NOI) approach toward scalable and integratable nanotube devices on sapphire
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We present a novel nanotube-on-insulator (NOI) approach to produce high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. Based on the nanotube arrays, we demonstrated registration-free fabrication of both top-gated and polymer-electrolyte-gated field-effect transistors with minimized parasitic capacitance. In addition, we have successfully developed a way to transfer these aligned nanotube arrays to flexible substrates. Our approach has great potential for high-density, largescale integrated systems based on carbon nanotubes for both micro- and flexible electronics.
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Chongwu Zhou, Chongwu Zhou, Xiaolei Liu, Xiaolei Liu, Song Han, Song Han, Koungmin Ryu, Koungmin Ryu, Bo Lei, Bo Lei, Alexander Badmaev, Alexander Badmaev, Jayakanth Ravichandran, Jayakanth Ravichandran, Lei Dong, Lei Dong, } "A nanotube-on-insulator (NOI) approach toward scalable and integratable nanotube devices on sapphire", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 637002 (19 October 2006); doi: 10.1117/12.690572; https://doi.org/10.1117/12.690572

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