19 October 2006 A nanotube-on-insulator (NOI) approach toward scalable and integratable nanotube devices on sapphire
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Abstract
We present a novel nanotube-on-insulator (NOI) approach to produce high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. Based on the nanotube arrays, we demonstrated registration-free fabrication of both top-gated and polymer-electrolyte-gated field-effect transistors with minimized parasitic capacitance. In addition, we have successfully developed a way to transfer these aligned nanotube arrays to flexible substrates. Our approach has great potential for high-density, largescale integrated systems based on carbon nanotubes for both micro- and flexible electronics.
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Chongwu Zhou, Xiaolei Liu, Song Han, Koungmin Ryu, Bo Lei, Alexander Badmaev, Jayakanth Ravichandran, Lei Dong, "A nanotube-on-insulator (NOI) approach toward scalable and integratable nanotube devices on sapphire", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 637002 (19 October 2006); doi: 10.1117/12.690572; https://doi.org/10.1117/12.690572
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