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19 October 2006 Catalyst-free selective-area MOVPE of semiconductor nanowires
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We describe our recent results on the formation of catalyst-free III-V semiconductor nanowires and related nanostructures utilizing selective-area metalorganic vapor phase epitaxial (SA-MOVPE) growth. Array of vertically aligned nanowires are grown on partially masked GaAs and InP substrate along the [111]B or [111]A directions, respectively. The alignment and size of the nanowires are controlled by the mask patterning as well as growth conditions. Nanowires containing heterostructures in their radial direction have also been realized by controlling the growth mode during SA-MOVPE. Their optical and transport properties are also investigated and described.
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Junichi Motohisa and Takashi Fukui "Catalyst-free selective-area MOVPE of semiconductor nanowires", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 63700B (19 October 2006);

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