19 October 2006 Metal organic chemical vapor deposition of indium phosphide nanoneedles on non-single crystal silicon surfaces
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Abstract
A new route to grow single crystal semiconductor nanostructures was proposed and demonstrated on non-single crystal substrates. Hydrogenated silicon surfaces, amorphous silicon and microcrystalline silicon, were used to provide atomic short-range order required for epitaxial growth of nanostructures. Indium phosphide was chosen as a platform for semiconductor nanostructures. Indium phosphide was deposited on the hydrogenated silicon surfaces by low-pressure metalorganic chemical vapor deposition with a presence of colloidal gold nanoparticles. Under specific metal organic chemical vapor deposition growth conditions, the indium phosphide was found to grow into nanoneedles. Structural analysis reveals that the nanoneedles are single crystal and have either face-centered-cubic or hexagonal-closed-pack lattice when grown onto the hydrogenated microcrystalline silicon surfaces. Micro-photoluminescence measurements shows that the emission peak wavelength of an ensemble of the InP nanoneedles both on the hydrogenated amorphous silicon and hydrogenated microcrystalline silicon surfaces have a substantial blue-shift with respect to that of bulk indium phosphide. The unique shape of the emission spectra is attributed to different types of nanoneedles co-existing on the samples. The proposed route to grow semiconductor nanostructures on non-single crystal substrates would open new applications including photovoltaic, photo-detection, photo-emission and thermal energy-conversion, for which the usage of costly single crystal substrates is not preferred.
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Nobuhiko P. Kobayashi, Shih-Yuan Wang, Charles Santori, R. Stanley Williams, "Metal organic chemical vapor deposition of indium phosphide nanoneedles on non-single crystal silicon surfaces", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 63700S (19 October 2006); doi: 10.1117/12.692672; https://doi.org/10.1117/12.692672
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