19 October 2006 Heterogeneous integration of semiconducting and carbide nanowires on Si substrates
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Abstract
Integration of nanowires onto foreign substrates, and in functional devices, is widely recognized as a significant hurdle to further development of nanosystems based on quasi-one dimensional nanostructures. We describe methods for directly integrating relevant nanostructures on technologically relevant Si substrates using vapor phase synthesis of the nanowires. It is shown that ZnO nanowires may be directly integrated onto Si substrates containing patterned metal lines. Preferential growth from the edge of the metal lines has been achieved. We also show that growth of refractory transition metal carbides is also possible using catalytic growth. The electrical properties of such systems are also discussed. Finally, methods of integrating nanowires vertically on a Si substrate are also described.
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Loucas Tsakalakos, Loucas Tsakalakos, Seth T. Taylor, Seth T. Taylor, Reed R. Corderman, Reed R. Corderman, Joleyn Balch, Joleyn Balch, Jody Fronheiser, Jody Fronheiser, } "Heterogeneous integration of semiconducting and carbide nanowires on Si substrates", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 637019 (19 October 2006); doi: 10.1117/12.696056; https://doi.org/10.1117/12.696056
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