18 October 2006 Toward the modulation of negative index materials (NIM) by photoconductive coupling
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Proceedings Volume 6373, Terahertz Physics, Devices, and Systems; 63730H (2006) https://doi.org/10.1117/12.688069
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
In this paper, we demonstrate the feasibility of incorporating a modulation mechanism for negative index materials (NIM) at GHz frequency range by means of photoconductive coupling. This leads the way to a fully integrated monolithic NIM achievable by conventional microfabrication techniques. The photosensitive material was placed in the gap of the SRR structure and the response in terms of S-parameters was simulated using HFSSTM. Only the SRR particle was simulated, without any loss of generality to the extension in concept to a NIM comprising of both negative permeability and negative permittivity.
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Logeeswaran VJ, Logeeswaran VJ, Alexander N. Stameroff, Alexander N. Stameroff, M. Saif Islam, M. Saif Islam, Wei Wu, Wei Wu, Shih-Yuan Wang, Shih-Yuan Wang, } "Toward the modulation of negative index materials (NIM) by photoconductive coupling", Proc. SPIE 6373, Terahertz Physics, Devices, and Systems, 63730H (18 October 2006); doi: 10.1117/12.688069; https://doi.org/10.1117/12.688069

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