Paper
12 October 2006 Simultaneous measurement of film surface topography and thickness variation using white-light interferometry
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Abstract
In vertical scanning white-light interferometry, two peaks appear in the interference waveform if a transparent film exists on the surface to be measured. We have developed an algorithm that is able to detect the position of these peaks quickly and accurately, and have put into practical use a film profiler that is able to simultaneously measure the profiles of both the front and back surfaces and the thickness distribution of a transparent film. This technique is applicable to transparent films with an optical thickness of approximately 1 μm or greater, and it is used effectively in the semiconductor and LCD manufacturing processes.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsuichi Kitagawa "Simultaneous measurement of film surface topography and thickness variation using white-light interferometry", Proc. SPIE 6375, Optomechatronic Sensors, Instrumentation, and Computer-Vision Systems, 637507 (12 October 2006); https://doi.org/10.1117/12.688109
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CITATIONS
Cited by 5 scholarly publications and 2 patents.
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KEYWORDS
Algorithm development

Interferometry

Refractive index

Semiconducting wafers

Silicon

LCDs

Oxides

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