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2 October 2006 Recent development on silicon-based Raman lasers and amplifiers
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Proceedings Volume 6389, Active and Passive Optical Components for Communications VI; 638904 (2006)
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
We present a monolithic integrated Raman silicon laser and amplifier based on silicon-on-insulator rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we efficiently reduced the nonlinear loss due to two-photon absorption induced free carrier absorption and achieved continuous-wave net gain and stable, single-mode lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a side mode suppression exceeding 70dB and a laser linewidth of <100 kHz. This ring resonator architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device. Using the ring resonator architecture, we can build a compact, chip scale Raman amplifier that takes advantage of the resonance effect to increase the effective pump power and reduce the device size. Our simulations suggest that a 3dB net gain can be achieved with 4dB less pump power in a 3cm ring compared to a straight waveguide of the same length.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haisheng Rong, Ying-Hao Kuo, Shengbo Xu, Oded Cohen, Omri Raday, and Mario Paniccia "Recent development on silicon-based Raman lasers and amplifiers", Proc. SPIE 6389, Active and Passive Optical Components for Communications VI, 638904 (2 October 2006); doi: 10.1117/12.689338;


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