Paper
2 October 2006 InGaAs/InAlAs multi-quantum well light modulator and detector
P. G. Maloney, F. E. Koch, K. Alavi, J. Pellegrino, T. Hongsmatip, D. Carothers, M. Winn
Author Affiliations +
Proceedings Volume 6389, Active and Passive Optical Components for Communications VI; 63890V (2006) https://doi.org/10.1117/12.684686
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
Multi-Quantum Well (MQW) modulators have been demonstrated with a high contrast ratio of of 5:1 in an InGaAs/InAlAs p-i-n structure at 1.55 μm. Additionally, it was found that modulators that exploit the optical properties of resonant cavities can achieve contrast ratios at least three times larger than those that don't. The devices fabricated were measured to have modulation rates of greater than 30 MHz. Lastly, quantum efficiencies and responsivity measurements show that modulator would be able to detect incident light and coupled with electronics would "know" when to modulate.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. G. Maloney, F. E. Koch, K. Alavi, J. Pellegrino, T. Hongsmatip, D. Carothers, and M. Winn "InGaAs/InAlAs multi-quantum well light modulator and detector", Proc. SPIE 6389, Active and Passive Optical Components for Communications VI, 63890V (2 October 2006); https://doi.org/10.1117/12.684686
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KEYWORDS
Modulation

Modulators

Absorption

Measurement devices

Quantum efficiency

Amplifiers

Sensors

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