Nonlinear absorption of highly stacked InAs quantum dot layers on an InP(311) substrate

Toshiro Isu; Jun Inoue; Kouichi Akahane; Hideyuki Sotobayashi; Masahiro Tsuchiya

doi:10.1117/12.685616

2 October 2006 Nonlinear absorption of highly stacked InAs quantum dot layers on an InP(311) substrate

Toshiro Isu, Jun Inoue, Kouichi Akahane, Hideyuki Sotobayashi, Masahiro Tsuchiya

Proceedings Volume 6393, Nanophotonics for Communication: Materials, Devices, and Systems III; 639309 (2006) https://doi.org/10.1117/12.685616
Event: Optics East 2006, 2006, Boston, Massachusetts, United States

Abstract

Semiconductor quantum dots have unique characteristics which advantage especially for saturable absorbers. We characterized nonlinear optical absorption of highly-stacked InAs quantum dot layers on an InP (311)B substrate in 1.5-μm band. High-density (5 x 10¹² cm^-2) quantum dots by stacked more than 150 layers were recently fabricated with a strain-controlled technique for 1.5-μm communication devices. The transmission increase for the vertical incidence was observed as much as 1%, and transmittance decreased at higher intensity of incident pulse. The temporal behavior of the transmission increase showed two decay components of a few picoseconds and several hundred picoseconds decay. The nonlinear absorption was explained by the saturable absorption of the quantum dots layer and the two photon absorption of the InP substrate. The features of the saturable absorber are suitable for application to a mode-locker for generating short optical pulses in the 1.5-μm band. Analysis showed that we can tune the saturable absorption characteristics by adjusting the numbers of quantum dot layers, thickness of residual InP substrate and antireflection coating on the surfaces. We obtained planar type saturable absorbers at a typical saturation intensity of 35MW/cm² with 3.5% transmittance change for a traveling type and 8% change for reflective type, respectively.

Citation Download Citation

Toshiro Isu, Jun Inoue, Kouichi Akahane, Hideyuki Sotobayashi, and Masahiro Tsuchiya "Nonlinear absorption of highly stacked InAs quantum dot layers on an InP(311) substrate", Proc. SPIE 6393, Nanophotonics for Communication: Materials, Devices, and Systems III, 639309 (2 October 2006); https://doi.org/10.1117/12.685616

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available