5 October 2006 LWIR HgCdTe focal plane array performance variations with epitaxial structure properties
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Abstract
Full replacement of scanning type thermal imaging (TI) equipment by starring type TI is on agenda of XXI century. Realization requires development and launching production of affordable large format high performance photovoltaic (PV) infrared (IR) focal plane arrays (FPA) covering spectral range from 1.3 to 14 μm. Advanced Infrared Focal Plane Arrays include Short-Wave (SWIR) 1.3-2.5 μm operating at near room temperature Top=300 K, Mid-Wave (MWIR) 3- 5.5 μm operating at higher temperatures (HOT) Top=200-240 K, extended Long-Wave (LWIR) 8-14 μm operating at temperatures Top=80-100 K and multi-color arrays. Challenge is serious and adequate research and development works have to be done. One of major approach is fabrication of megapixel IRFPA based on Hg1-xCdxTe epitaxial multi-layer structures grown by molecular beam epitaxy (MBE). To be successful with approach it is necessary to optimize design of pixel and develop reproducible MBE growth technology issuing epitaxial structures with perfect layers and interfaces. Perhaps novel FPA will be based on photodiodes (PD) with p-n junction opposite to usually used n+-p junction. PD with optimal p-n junction could have lower dark current value than same size n+-p junction. It is desirable for proper multiplexing of PD arrays to Silicon Read-out Integrated Circuits (ROICs). Objective of the present work was to examine Hg1-xCdxTe LWIR PV FPA (λp ranged from 10 to 11 μm at Top=80-100 K) performance variation with doping level, absorber thickness, interface shunting and operating temperature.
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Galina V. Chekanova, Albina A. Drugova, Viacheslav Kholodnov, Alexander V. Kurbatov, and Mikhail S. Nikitin "LWIR HgCdTe focal plane array performance variations with epitaxial structure properties", Proc. SPIE 6395, Electro-Optical and Infrared Systems: Technology and Applications III, 63950F (5 October 2006); doi: 10.1117/12.689739; https://doi.org/10.1117/12.689739
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