Femtosecond interaction processes near threshold: damage and ablation

R. Fedosejevs; S. E. Kirkwood; R. Holenstein; N. Young; Y. Y. Tsui

doi:10.1117/12.697293

15 January 2007 Femtosecond interaction processes near threshold: damage and ablation

R. Fedosejevs, S. E. Kirkwood, R. Holenstein, N. Young, Y. Y. Tsui

Proceedings Volume 6403, Laser-Induced Damage in Optical Materials: 2006; 640302 (2007) https://doi.org/10.1117/12.697293
Event: Boulder Damage Symposium XXXVIII: Annual Symposium on Optical Materials for High Power Lasers, 2006, Boulder, Colorado, United States

Abstract

Femtosecond laser ablation is an important process in micromachining and nanomachining of microelectronic, optoelectronic, biophotonic and MEMS components. It is also important in the damage of optical components and materials. A thorough understanding of all aspects of femtosecond matter interaction processes in the near-threshold regime is required if one wants to have complete control of these processes. Two aspects of the interaction process for metals and semiconductors are examined in detail in the present paper, namely the effect of a more complete model for the temperature dependent electron thermal conductivity in metals and the avalanche ionization process in semiconductors. These are included in two temperature and molecular dynamics modeling calculations respectively. The proper inclusion of these processes allows the model calculations to better reproduce published experimental measurements for copper and silicon.

Citation Download Citation

R. Fedosejevs, S. E. Kirkwood, R. Holenstein, N. Young, and Y. Y. Tsui "Femtosecond interaction processes near threshold: damage and ablation", Proc. SPIE 6403, Laser-Induced Damage in Optical Materials: 2006, 640302 (15 January 2007); https://doi.org/10.1117/12.697293

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