Structural and magnetic properties of cobalt implanted TiO2 thin films

W. Y. Luk; S. P. Wong; N. Ke; Q. Li; J. K. N. Lindner

doi:10.1117/12.695191

20 December 2006 Structural and magnetic properties of cobalt implanted TiO₂ thin films

W. Y. Luk, S. P. Wong, N. Ke, Q. Li, J. K. N. Lindner

Proceedings Volume 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III; 64150M (2006) https://doi.org/10.1117/12.695191
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2006, Adelaide, Australia

Abstract

We experimentally investigate the room temperature ferromagnetism (RTFM) observed in Co implanted anatase TiO₂ thin films. TiO₂ thin films were prepared by RF sputtering onto thermally grown oxide layers on Si substrates. Cobalt implantation was performed using a metal vapor vacuum arc ion source at an implant dose of 4 x10¹⁶ cm^-2. Post annealing was performed in a vacuum chamber at various temperatures up to 700°C for 2 or 4 hours. Characterization of these films as-implanted and after thermal annealing under various conditions was performed using Rutherford backscattering spectrometry, transmission electron microscopy, x-ray diffractometry and vibrating sample magnetometry. Clear RTFM properties were observed in all samples. The M_S value showed a general increase trend with increasing annealing time with higher values at higher annealing temperatures. Quite a number of samples showed Ms values exceeding the bulk Co value of 1.69_μB/Co atom after annealing. The maximum MS value observed is about 3.16_μB/Co atom for the sample annealed at 700°C for 4 hours. Such high M_S values indicate that the RTFM must not come from Co clusters alone. Possible origins of the RTFM properties are discussed in conjunction with the structural properties.

Citation Download Citation

W. Y. Luk, S. P. Wong, N. Ke, Q. Li, and J. K. N. Lindner "Structural and magnetic properties of cobalt implanted TiO₂ thin films", Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 64150M (20 December 2006); https://doi.org/10.1117/12.695191

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