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20 December 2006 A new technique for preparing PSG film using RF magnetron sputtering
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Abstract
In the present work, we report a new technique for preparing phospho-silicste-glass (PSG) films using RF magnetron sputtering process. For this, purpose, a 76 mm diameter target of phosphorus-doped silicon dioxide was prepared by conventional solid-state reaction route using P2O5 and SiO2 powders. Since P2O5 is hygroscopic in nature, special care was taken to prevent lump formation due to moisture incorporation during the target making process. The PSG films were prepared in a RF (13.56 MHz) magnetron sputtering system at 200-300 watt RF power, 10-20 mTorr pressure and 45 mm target-to-substrate spacing without external substrate heating. The thickness, refractive index (n) and the absorption coefficient (k) of the films were measured using a thin-film analyzer. To confirm the presence of phosphorus in the deposited films, hot-probe test and the sheet resistance measurements were performed. As a final confirmatory test, a p-n diode was fabricated in a p-type Si wafer using the deposited film as a source of phosphorus diffusion. The phosphorus concentration in the target and the deposited film were analyzed using energy dispersive X-rays (EDAX) tool. The etch rate of the PSG film in buffered HF was measured to be about 30 times higher as compared to that of thermally grown SiO2 films. The issues related to the use of RF sputtered PSG films as sacrificial layer in surface micromachining technology have been addressed.
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Sudhir Chandra and Vivekanand Bhatt "A new technique for preparing PSG film using RF magnetron sputtering", Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 64151H (20 December 2006); https://doi.org/10.1117/12.696500
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