20 December 2006 Adhesive wafer-to-wafer bonding using contact imprinting
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The present work proposes an adhesive bonding technique, at wafer level, using SU-8 negative photoresist as intermediate layer. The adhesive was selective imprint on one of the bonding surface. The main applications are in microfluidic area where a low temperature bonding is required. The method consists of three major steps. First the adhesive layer is deposited on one of the bonding surface by contact imprinting from a dummy wafer where the SU-8 photoresist was initially spun, or from a Teflon cylinder. Second, the wafers to be bonded are placed in contact and aligned. In the last step, the bonding process is performed at temperatures between 100°C and 200°C, a pressure of 1000 N in vacuum on a classical wafer bonding system. The results indicate a low stress value induced by the bonding technique. In the same time the process presents a high yield: 95-100%. The technique was successfully tested in the fabrication process of a dielectrophoretic device.
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Liming Yu, Liming Yu, Ah Ju Pang, Ah Ju Pang, Bangtao Chen, Bangtao Chen, Francis E. H. Tay, Francis E. H. Tay, Ciprian Iliescu, Ciprian Iliescu, } "Adhesive wafer-to-wafer bonding using contact imprinting", Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 64151I (20 December 2006); doi: 10.1117/12.696544; https://doi.org/10.1117/12.696544

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