1 November 2007 A novel hinged micromachined high-g piezoresistive accelerometer
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Proceedings Volume 6423, International Conference on Smart Materials and Nanotechnology in Engineering; 642306 (2007) https://doi.org/10.1117/12.779134
Event: International Conference on Smart Materials and Nanotechnology in Engineering, 2007, Harbin, China
Abstract
A novel silicon micromachined hinged high-g piezoresistive accelerometer with wide bandwidth is presented. The sensitivity of this accelerometer can be improved while maintaining a high resonance frequency. Based on the simulation of the finite element method, design parameters are obtained for a natural resonance frequency of 573kHz for a large range of 200,000g. The high-g accelerometer is fabricated by advanced silicon bulk micromachining technology. By using a dropping-hammer testing system, characterization measurements show a sensitivity of 0.502μV/g for a 30646g shock acceleration under the 5V excitation.
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Kebin Fan, Bin Xiong, Lufeng Che, Yuelin Wang, "A novel hinged micromachined high-g piezoresistive accelerometer", Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 642306 (1 November 2007); doi: 10.1117/12.779134; https://doi.org/10.1117/12.779134
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