13 November 2007 The influence of doping concentration on piezoresistive temperature characteristics of polysilicon nanofilms
Author Affiliations +
Proceedings Volume 6423, International Conference on Smart Materials and Nanotechnology in Engineering; 64232N (2007) https://doi.org/10.1117/12.779870
Event: International Conference on Smart Materials and Nanotechnology in Engineering, 2007, Harbin, China
Abstract
Compared with ordinary polysilicon films and monocrystalline silicon, heavy doped polysilicon nanofilms have better piezoresistive properties and better temperature characteristics. Therefore, pressure sensors made of polysilicon nanofilms will have many corresponding advantages, including high sensitivity and complete self-compensation of temperature coefficients. In this paper, the influence of doping concentration on temperature coefficient of resistance (TCR) and temperature coefficient of gauge factor (TCGF) is deeply studied to optimize doping concentration in order to make temperature coefficients lowest. TCR and TCGF of samples with doping concentration of 4.1×1019cm-3, 1.0×1020cm-3, 2.0×1020cm-3, 4.1×1020cm-3, 7.1×1020cm-3 are tested at temperature range 23°C to 270°C, respectively, and the microstructures of the samples are also observed by the method of scanning electron microscopy (SEM) and transmission electron microscope (TEM). The experimental results have been explained reasonably based on the tunneling piezoresistive theory proposed before. Based on both experimental results and theoretical analyses, to obtain a zero value of TCR and a low value -0.1%/°C of TCGF, the optimal doping concentration of the films of 80nm thickness should be about 3×1020cm-3.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaowei Liu, Xuebin Lu, Rongyan Chuai, Huiyan Pan, Xilian Wang, Jinfeng Li, "The influence of doping concentration on piezoresistive temperature characteristics of polysilicon nanofilms", Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 64232N (13 November 2007); doi: 10.1117/12.779870; https://doi.org/10.1117/12.779870
PROCEEDINGS
7 PAGES


SHARE
Back to Top