1 November 2007 Investigation of intensity and spectrum of silicon nanowires by ESR
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Proceedings Volume 6423, International Conference on Smart Materials and Nanotechnology in Engineering; 642350 (2007) https://doi.org/10.1117/12.780317
Event: International Conference on Smart Materials and Nanotechnology in Engineering, 2007, Harbin, China
Abstract
The signal intensity and spectrum of electron-spin resonance (ESR) has been observed in silicon nanowires (SiNW's) and nano-crystalline silicon structure based on JEOL system model FA-100 at around 9.4GHz, microwave modulation frequency was stabilized at 100KHz. The over-saturation behaviors of signal intensity of ESR in different diameters of SiNW's by observing the microwave power and analyzing the oxidation related, room temperature (RT) and 77K dependences of ESR spectrum in different magnetic fields and microwave powers have been ascribed that they come from the different defects. The defects have existed in silicon-based materials using physical behaviors of the signal intensity of ESR we have obtained because of the influence of temperature dependences, different microwave powers and oxidized sample for SiNW's.
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Li Wang, Haoxin Zhang, Rongping Wang, "Investigation of intensity and spectrum of silicon nanowires by ESR", Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 642350 (1 November 2007); doi: 10.1117/12.780317; https://doi.org/10.1117/12.780317
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