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14 February 2007 Subpicosecond vacuum ultraviolet laser system for advanced materials processing
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Abstract
We have been developing the vacuum ultraviolet (VUV) light sources and novel applications using such short wavelength emission sources. High quality amorphous Si thin films were successfully produced at room temperature as a result of photo-dissociation of SiH4 gas by using an Ar2* excimer lamp irradiation at 126 nm. To enhance such novel VUV processing applications, a compact VUV amplifier at 126 nm was developed by use of the optical-field-ionization (OFI) electrons. The gain-length product around 5 was obtained as a result of the optical feedback by using a VUV mirror. This amplifier was operated in a table-top size with a high repetition rate up to several kHz, which should be appropriate for any process applications. We also describe the schematic concept of the ultrashort pulse high-intensity VUV laser system at 126 nm with a pulse width of 100 fs.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shoichi Kubodera, Yuta Taniguchi, Akira Hosotani, Masahito Katto, Atsushi Yokotani, Noriaki Miyanaga, and Kunioki Mima "Subpicosecond vacuum ultraviolet laser system for advanced materials processing", Proc. SPIE 6452, Laser Resonators and Beam Control IX, 645216 (14 February 2007); https://doi.org/10.1117/12.697133
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