Paper
14 February 2007 Iterative resonator model describing the Stokes and anti-Stokes emission of a continuous-wave silicon-based Raman laser
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Abstract
We present a novel numerical model that allows determining the Stokes and anti-Stokes emission characteristics of a continuous-wave silicon-based Raman laser. This so-called iterative resonator model evaluates for every half roundtrip time the longitudinal distribution of the intra-cavity pump, Stokes and anti-Stokes fields propagating in forward and backward directions, while taking into account the two-photon absorption losses and free carrier absorption losses occurring in the silicon laser medium. Furthermore, we demonstrate that our model exhibits important advantages in comparison with the power distribution model used for silicon-based Raman lasers. Finally, we present the first numerical simulation results for a silicon-based Raman laser emitting both Stokes and anti-Stokes photons.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nathalie Vermeulen, Christof Debaes, and Hugo Thienpont "Iterative resonator model describing the Stokes and anti-Stokes emission of a continuous-wave silicon-based Raman laser", Proc. SPIE 6455, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI, 64550N (14 February 2007); https://doi.org/10.1117/12.698484
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KEYWORDS
Raman spectroscopy

Semiconductor lasers

Silicon

Resonators

Laser resonators

Continuous wave operation

Data modeling

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