Reliability and failure mode investigation of high-power multimode InGaAs strained quantum well single emitters

Yongkun Sin; Brendan Foran; Nathan Presser; Maribeth Mason; Steven C. Moss

doi:10.1117/12.697194

7 February 2007 Reliability and failure mode investigation of high-power multimode InGaAs strained quantum well single emitters

Yongkun Sin, Brendan Foran, Nathan Presser, Maribeth Mason, Steven C. Moss

Author Affiliations +

Proceedings Volume 6456, High-Power Diode Laser Technology and Applications V; 645605 (2007) https://doi.org/10.1117/12.697194
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States

Abstract

In recent years record performance characteristics from multi-mode InGaAs strained quantum well single emitters at 920-980nm have been reported including a maximum CW optical output power of ~20W and a power conversion efficiency of ~75%. These excellent performance characteristics are only possible through combined optimization of laser structure design, chip fabrication processes, and packaging. Whereas broad area multi-mode single emitters likely have sufficient reliability for industrial uses, reliability of these lasers still remains a concern for communications applications including deployment in potential space satellite systems where high reliability is required. Most of previous reports on these lasers have been focused on their performance characteristics with very limited reports on failure mode analysis although understanding the physics of failure is crucial in developing a proper lifetime model for these lasers. We thus report on the reliability and failure mode analysis of high power multi-mode single emitters. The lasers studied were broad area strained InGaAs single QW lasers at 940-980nm with typical aperture widths of around 100&mgr;m. At an injection current of 7A typical CW output powers were over 6W at 25°C with a wall plug efficiency of ~60%. First, various lasing characteristics were measured including spatial and thermal characteristics that are critical to understanding performance and reliability of these devices. ACC burn-in tests with different stress conditions were performed on these devices until their failure. We report accelerated lifetest results with over 5000 accumulated test hours. Finally, we report failure mode investigation results of the degraded lasers.

Citation Download Citation

Yongkun Sin, Brendan Foran, Nathan Presser, Maribeth Mason, and Steven C. Moss "Reliability and failure mode investigation of high-power multimode InGaAs strained quantum well single emitters", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 645605 (7 February 2007); https://doi.org/10.1117/12.697194

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available