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19 February 2007 Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars
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Abstract
There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 &mgr;s, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Hülsewede, H. Schulze, J. Sebastian, D. Schröder, J. Meusel, and P. Hennig "Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 645607 (19 February 2007); https://doi.org/10.1117/12.705119
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