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7 February 2007 High-power highly reliable single emitter laser diodes at 808 nm
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Abstract
High power laser diodes and diode arrays emitting at the wavelength of 808nm are widely used for pumping neodymium (Nd+) doped solid state lasers and fiber lasers, medical surgery, dental treatment and material processing. In general, the power is limited by catastrophic optical mirror damage (COMD) and heat dissipation. In this paper we demonstrate 29W CW output power at 808 nm from a 400 &mgr;m single emitter with 2mm cavity length. The device thermally rolls over due to the excess heat. The L-I curve rolls over at 29.5W, the laser is still alive, and we can repeat the test again and again without catastrophic optical mirror-damage (COMD). The device consists of an InAlGaAs/AlGaAs/GaAs, optimized special graded-index separated-confinement heterostructure (GRINSCH) broad waveguide (BW), single quantum well (SQW) and barriers between waveguide and cladding layers. A weak temperature dependence characteristic, which is desirable for high power and reliable operation, is obtained from these devices.
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Wei Gao, Zuntu Xu, Lisen Cheng, Kejian Luo, Andre Mastrovito, and Kun Shen "High-power highly reliable single emitter laser diodes at 808 nm", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560B (7 February 2007); https://doi.org/10.1117/12.701612
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