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7 February 2007 Ongoing development of high-efficiency and high-reliability laser diodes at Spectra-Physics
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Abstract
Ongoing optimization of epitaxial designs, MOCVD growth processes, and device engineering at Spectra-Physics has yielded significant improvement in both power conversion efficiency (PCE) and reliable power, without compromising manufacturability in a high-volume production environment. Maximum PCE of 72.2% was measured at 25 °C for 976- nm single-emitter devices with 3-mm cavity length. 928 W continuous-wave (CW) output power has been demonstrated from a high-efficiency (65% maximum PCE) single laser bar with 5-mm cavity length and 77% fill factor. Eight-element laser bars (976 nm) with 100&mgr;m-wide emitters have been operated at >148 W CW, corresponding to linear power densities at the facet >185 mW/&mgr;m. Ongoing life-testing, in combination with stepped stress tests, indicate rates of random failure and wear-out are well below those of earlier device designs. For operation near 800 nm, the design has been optimized for high-power, high-temperature applications. The highest PCE for water-cooled stacks was 54.7% at 35°C coolant temperature.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hanxuan Li, Irving Chyr, Denny Brown, Xu Jin, Frank Reinhardt, Terry Towe, Touyen Nguyen, Raman Srinivasan, Myra Berube, Robert Miller, Kiran Kuppuswamy, Yongdan Hu, Trevor Crum, Tom Truchan, and James Harrison "Ongoing development of high-efficiency and high-reliability laser diodes at Spectra-Physics", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560C (7 February 2007); https://doi.org/10.1117/12.701714
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