Paper
7 February 2007 10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry
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Abstract
High-power diode lasers operating at 808 nm and consisting of a multiple ridge-waveguide structure have been fabricated. Lasers with this structure show a more stable far and near field pattern in comparison to conventional single stripe broad area lasers. A reliable continuous wave operation at room temperature over 8000 h at 8 W and 800 h at 10 W has been achieved with 200 &mgr;m stripe width devices.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Paschke, S. Einfeldt, Chr. Fiebig, A. Ginolas, K. Häusler, P. Ressel, B. Sumpf, and G. Erbert "10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560H (7 February 2007); https://doi.org/10.1117/12.699901
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Cited by 5 scholarly publications.
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KEYWORDS
Near field

Semiconductor lasers

Near field optics

High power lasers

Reliability

Waveguides

Modulation

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