7 February 2007 10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry
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Abstract
High-power diode lasers operating at 808 nm and consisting of a multiple ridge-waveguide structure have been fabricated. Lasers with this structure show a more stable far and near field pattern in comparison to conventional single stripe broad area lasers. A reliable continuous wave operation at room temperature over 8000 h at 8 W and 800 h at 10 W has been achieved with 200 &mgr;m stripe width devices.
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K. Paschke, K. Paschke, S. Einfeldt, S. Einfeldt, Chr. Fiebig, Chr. Fiebig, A. Ginolas, A. Ginolas, K. Häusler, K. Häusler, P. Ressel, P. Ressel, B. Sumpf, B. Sumpf, G. Erbert, G. Erbert, } "10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560H (7 February 2007); doi: 10.1117/12.699901; https://doi.org/10.1117/12.699901
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