7 February 2007 High-power high-brightness high-reliability laser diodes emitting at 800-1000 nm
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In this paper we report the development of high power high brightness semiconductor laser chips using a combination of quantum well intermixing (QWI) and novel laser designs including laterally unconfined non-absorbing mirrors (LUNAM). We demonstrate both multi-mode and single-mode lasers with increased power and brightness and reliability performance for the wavelengths of 980 nm, 940 nm, 830 nm and 808 nm.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan A. Yanson, Dan A. Yanson, John H. Marsh, John H. Marsh, Stephen Najda, Stephen Najda, Stewart D. McDougall, Stewart D. McDougall, Hassan Fadli, Hassan Fadli, Graeme Masterton, Graeme Masterton, Bocang Qiu, Bocang Qiu, Olek P. Kowalski, Olek P. Kowalski, Gianluca Bacchin, Gianluca Bacchin, Gordon McKinnon, Gordon McKinnon, } "High-power high-brightness high-reliability laser diodes emitting at 800-1000 nm", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560L (7 February 2007); doi: 10.1117/12.699038; https://doi.org/10.1117/12.699038


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