7 February 2007 Reliable operation of 785 nm DFB diode lasers for rapid Raman spectroscopy
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Experimental results on RW and BA DFB lasers emitting at 785 nm suitable for Raman spectroscopy are presented. Optical spectra of the RW DFB laser reveal single mode operation with a side-mode suppression ratio of more than 45 dB at optical output powers up to 163 mW. A reliable operation of more than 8800 h of these devices is demonstrated. Within a spectral width of 0.6 nm, more than 99.9% of 1.1 W optical power of the BA DFB laser emitting at 785 nm are included. Raman measurements with RW and BA DFB lasers as excitation light sources and polystyrene as a test sample are presented. At an output power of 1.1 W of the BA device the integration time for the Raman measurement could be reduced to 50 ms.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Maiwald, G. Erbert, A. Klehr, B. Sumpf, H. Wenzel, T. Laurent, J. Wiedmann, H.-D. Kronfeldt, H. Schmidt, "Reliable operation of 785 nm DFB diode lasers for rapid Raman spectroscopy", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560W (7 February 2007); doi: 10.1117/12.699899; https://doi.org/10.1117/12.699899

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