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8 February 2007 Mode selection and phase locking of sidelobe emitting semiconductor laser arrays using an external cavity with a narrow-bandwidth volume grating
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Abstract
A novel phase locked array design, based on direct reflection feedback among adjacent cavities using an external grating, is analyzed and proposed. As a result of both longitudinal and transverse wavenumber selection, caused respectively by the narrow grating reflection bandwidth and by the array geometry, only one among the free running cavity eigenmodes can couple into a phase-locked, collective array eigenmode. The coupled array mode is experiencing the high reflectivity of the grating and surpasses the low gain of the free running modes, experiencing only a much lower reflectivity from the cavity edge mirror (anti-reflective coating). Thus phase locking and single mode operation can be concurrently achieved.
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Spilios Riyopoulos, G. Venus, and L. Glebov "Mode selection and phase locking of sidelobe emitting semiconductor laser arrays using an external cavity with a narrow-bandwidth volume grating", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 645613 (8 February 2007); https://doi.org/10.1117/12.700780
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