13 March 2007 Assembly and integration of thin bare die using laser direct-write
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Abstract
Laser-based direct-write (LDW) processes offer unique advantages for the transfer of unpackaged semiconductor bare die for microelectronics assembly applications. Using LDW it is possible to release individual devices from a carrier substrate and transfer them inside a pocket or recess in a receiving substrate using a single UV laser pulse, thus per-forming the same function as pick-and-place machines currently employed in microelectronics assembly. However, conventional pick-and-place systems have difficulty handling small (< 1mm2) and thin (< 100 μm) components. At the Naval Research Laboratory, we have demonstrated the laser release and transfer of intact 1 mm2 wafers with thicknesses down to 10 microns and with high placement accuracy using LDW techniques. Furthermore, given the gentle nature of the laser forward transfer process it is possible to transfer semiconductor bare die of sizes ranging from 0.5 to 10 mm2 without causing any damage to their circuits. Once the devices have been transferred, the same LDW system can then be used to print the metal patterns required to interconnect each device. The implementation of this technique is ideally suited for the assembly of microelectronic components and systems while allowing the overall circuit design and layout to be easily modified or adapted to any specific application or form factor including 3-D architectures. This paper describes how the LDW process can be used as an effective laser die transfer tool and will present analysis of the laser-driven release process as applied to various types of silicon bare dies.
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Alberto Piqué, Alberto Piqué, Nicholas A. Charipar, Nicholas A. Charipar, Ray C. Y. Auyeung, Ray C. Y. Auyeung, Heungsoo Kim, Heungsoo Kim, Scott A. Mathews, Scott A. Mathews, } "Assembly and integration of thin bare die using laser direct-write", Proc. SPIE 6458, Photon Processing in Microelectronics and Photonics VI, 645802 (13 March 2007); doi: 10.1117/12.706950; https://doi.org/10.1117/12.706950
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