Paper
13 March 2007 Laser direct-write and crystallization of FeSi2 micro-dot array for NIR light-emitting device application
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Abstract
We printed FeSi2 micro-dot array on various kinds of substrates utilizing laser-induced forward transfer (LIFT). An amorphous FeSi2 was deposited by sputtering on a transparent plate as a source film. A single KrF excimer laser pulse through a mask-projection system was imaged with a small micrometer-sized grid pattern onto a film/plate interface, resulting in the deposition of FeSi2 micro-dot array on a facing substrate with a high number density of 104 mm-2. FeSi2 in the &bgr; crystalline phase is a promising eco-friendly semiconductor because of NIR electroluminescence used for optical networking as well as abundant components reserve on the earth and non-toxicity. However, the &bgr;-FeSi2 film fabrication generally required high-temperature multi-processes which hamper its integration and performance reproducibility. Using the LIFT of micro-dot array, we succeeded in room-temperature preparation of &bgr;-FeSi2. Micro-Raman spectroscopy confirmed the &bgr; crystalline phase in the micro-dots deposited on an unheated silica glass substrate. Thus, the LIFT is useful for integrating functional micro-dot array accompanied by the crystallization at lower temperatures.
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Aiko Narazaki, Ryozo Kurosaki, Tadatake Sato, Yoshizo Kawaguchi, and Hiroyuki Niino "Laser direct-write and crystallization of FeSi2 micro-dot array for NIR light-emitting device application", Proc. SPIE 6458, Photon Processing in Microelectronics and Photonics VI, 645814 (13 March 2007); https://doi.org/10.1117/12.699835
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KEYWORDS
Crystals

Glasses

Silicon

Silica

Laser crystals

Excimer lasers

Near infrared

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