Heterostructure design optimization for laser cooling of GaAs

B. Imangholi; C. Wang; E. Soto; M. Sheik-Bahae; A. Stintz; K. Malloy; N. Nuntawong; R. Epstein

doi:10.1117/12.709847

15 March 2007 Heterostructure design optimization for laser cooling of GaAs

B. Imangholi, C. Wang, E. Soto, M. Sheik-Bahae, A. Stintz, K. Malloy, N. Nuntawong, R. Epstein

Proceedings Volume 6461, Laser Cooling of Solids; 64610G (2007) https://doi.org/10.1117/12.709847
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States

Abstract

Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.

Citation Download Citation

B. Imangholi, C. Wang, E. Soto, M. Sheik-Bahae, A. Stintz, K. Malloy, N. Nuntawong, and R. Epstein "Heterostructure design optimization for laser cooling of GaAs", Proc. SPIE 6461, Laser Cooling of Solids, 64610G (15 March 2007); https://doi.org/10.1117/12.709847

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