7 March 2007 Nanogap experiments for laser cooling: a progress report
Author Affiliations +
Proceedings Volume 6461, Laser Cooling of Solids; 64610H (2007); doi: 10.1117/12.708585
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States
One of the challenges of laser cooling a semiconductor is the typically high index of refraction (greater than 3), which limits efficient light output of the upconverted photon. This challenge is proposed to be met with a novel concept of coupling the photon out via a thin, thermally insulating vacuum gap that allows light to pass efficiently by frustrated total internal reflection. This study has the goal of producing a test structure that allows investigation of heat transport across a 'nanogap' consisting of a thin film supported over a substrate by an array of nanometer-sized posts. The nanogap is fabricated monolithically by first creating a film of SiO2 on a silicon substrate, lithographically defining holes in the SiO2, and covering this structure including the holes with silicon. Selective lateral etching will then remove the SiO2, leaving behind a thin gap between two Si layers spaced apart by nanometer-scale Si posts. Demonstration of this final step by successfully undercutting the a-Si upper layer due to the hydrophobic nature of silicon and the slow etch rate of buffered oxide etch in the small gap has proved to be problematic. Arriving at a feasible solution to this conundrum is the current objective of this project in order to begin investigating the thermal conductivity properties of the structure.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan P. Martin, Josef Velten, Andreas Stintz, Kevin J. Malloy, Richard I. Epstein, Mansoor Sheik-Bahae, Michael P. Hasselbeck, Babak Imangholi, S. T. P. Boyd, Todd M. Bauer, "Nanogap experiments for laser cooling: a progress report", Proc. SPIE 6461, Laser Cooling of Solids, 64610H (7 March 2007); doi: 10.1117/12.708585; https://doi.org/10.1117/12.708585



Amorphous silicon

Scanning electron microscopy

Semiconducting wafers

Semiconductor lasers

Silicon films


Film thickness measurement of amorphous silicon
Proceedings of SPIE (August 04 1993)
Stress release of PECVD oxide by RTA
Proceedings of SPIE (April 24 2003)
Reflective masks for 1X deep ultraviolet lithography
Proceedings of SPIE (January 01 1992)

Back to Top