Paper
19 January 2007 A novel technique for extraction of material properties through measurement of pull-in voltage and off-capacitance of beams
Jaibir Sharma, Amitava DasGupta
Author Affiliations +
Abstract
The mechanical properties of the structural layer play important role in the design and optimization of MEMS structures. The pull-in measurement is a popular technique used to measure the mechanical properties of a material, but its success depends on the accurate measurement of the gap (g) between the beam and the ground plane and its uniformity. In this paper we propose a novel technique which does not require accurate knowledge of the value of 'g'. In our proposed method, a large number of beams with different lengths (L) are to be fabricated simultaneously and the off-Capacitance (Coff) in addition to pull-in voltage (Vpi) measured in the same set-up. This is followed by a plot of (C3off V3piL4/A3)vs (1/A) for beams under bending dominating condition and (C3off V2piL2/A3) 1/A for beams under stress dominating condition, where A is the area of a beam. The plots are extrapolated to intersect the y-axis. The value of the intercept can be used to extract the values of Young's modulus and residual stress, without any definite knowledge of the value of 'g'. In this paper, we have shown with the help of simulations that using our method the material properties can be extracted very accurately even when the gap (g) is very nonuniform.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaibir Sharma and Amitava DasGupta "A novel technique for extraction of material properties through measurement of pull-in voltage and off-capacitance of beams", Proc. SPIE 6463, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS VI, 646309 (19 January 2007); https://doi.org/10.1117/12.699833
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gold

Capacitance

Microelectromechanical systems

Optical simulations

Oxides

Etching

Computer simulations

RELATED CONTENT

CMOS-compatible RF MEMS switch
Proceedings of SPIE (August 16 2004)

Back to Top