12 February 2007 Electrical properties of back-gated n-layer graphene films
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Abstract
We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (VG) in the range 25 < VG < 110 V; some films exhibited as much as a factor of ~50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.
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P. Joshi, P. Joshi, A. Gupta, A. Gupta, P. C. Eklund, P. C. Eklund, S. A. Tadigadapa, S. A. Tadigadapa, } "Electrical properties of back-gated n-layer graphene films", Proc. SPIE 6464, MEMS/MOEMS Components and Their Applications IV, 646409 (12 February 2007); doi: 10.1117/12.707654; https://doi.org/10.1117/12.707654
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