Small footprint InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes

Nathan J. Withers; Gennady A. Smolyakov; Hongjun Cao; Ron Kaspi; Marek Osiński

doi:10.1117/12.717247

22 March 2007 Small footprint InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes

Nathan J. Withers, Gennady A. Smolyakov, Hongjun Cao, Ron Kaspi, Marek Osiński

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 646802 (2007) https://doi.org/10.1117/12.717247
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Mid-infrared light-emitting diodes with InGaSb/AlGaAsSb triple-quantum-well active region have been integrated into arrays of either 200×200 μm² or 40×40 μm² square pixels. Two generations of arrays have been designed, fabricated and tested. The first, "sparse" 6×6 array provided valuable information on optimal electrode design and fabrication parameters that was used in the design and processing of the second generation "dense" 11×11 array.

Citation Download Citation

Nathan J. Withers, Gennady A. Smolyakov, Hongjun Cao, Ron Kaspi, and Marek Osiński "Small footprint InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 646802 (22 March 2007); https://doi.org/10.1117/12.717247

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