7 February 2007 Implications of injection current and optical input power on the performance of reflective semiconductor optical amplifiers
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Abstract
A time domain model for reflective semiconductor optical amplifiers (RSOAs) is developed based on the carrier rate equation and wave propagation equation. In this model, the gain saturation effect and the dependence of spontaneous carrier lifetime on carrier density are explicitly included, and the evolution of carrier density and the optical power in time and space under current modulation is considered in detail. Using the time domain model, the performance of RSOAs with different active layer lengths is investigated under different inject current densities and input optical powers. Numerical simulations reveal that the carrier spontaneous lifetime is the foremost limiting factor of RSOA modulation speed, but increasing photon density improves RSOA performance. With increased bias currents or optical input powers, the small signal frequency response is improved and the eye closure penalty under large signal on-off key modulation is reduced, but the extinction ratio of the optical output signal is decreased. Under the same bias current density and optical input power, RSOAs with longer active layers exhibit improved frequency response and smaller eye closure penalty.
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Ning Cheng, Ning Cheng, Leonid G. Kazovsky, Leonid G. Kazovsky, } "Implications of injection current and optical input power on the performance of reflective semiconductor optical amplifiers", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680V (7 February 2007); doi: 10.1117/12.699733; https://doi.org/10.1117/12.699733
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