Paper
22 March 2007 Quantum 3D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum-dot nanostructures
Yik-Khoon Ee, Yush P. Gupta, Ronald A. Arif, Nelson Tansu
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Abstract
Here we present a full 3-D numerical model based on Quantum-Finite-Difference-Time-Domain (Q-FDTD) method, with Perfectly Matched Layer (PML) boundary condition, as a versatile tool to accurately analyze 3-D QD nanostructure with arbitrary shape. Model solid theory has been utilized to determine the 3-D band lineup of the QD heterostructure. The effects of strain distribution, and effective mass distribution on the band structure of the QD nanostructure are also taken into account in the model. The Q-FDTD computation has been applied for analyzing MOCVD-grown InGaAs QDs with GaAs1-xPx barriers on GaAs. The Q-FDTD simulation, using the QDs shape measured by TEM and AFM, shows good agreement with the experimental results obtained from the as-grown InGaAs QDs with GaAs1-xPx barriers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yik-Khoon Ee, Yush P. Gupta, Ronald A. Arif, and Nelson Tansu "Quantum 3D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum-dot nanostructures", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681D (22 March 2007); https://doi.org/10.1117/12.700775
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Cited by 2 scholarly publications.
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KEYWORDS
Indium gallium arsenide

Gallium arsenide

Nanostructures

3D modeling

Quantum dots

Fourier transforms

Gallium

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