22 March 2007 Simulation of p-n junction properties of nanowires and nanowire arrays
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The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photo-detectors and lasers. Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires and nanowire arrays. The implications of such effects in nanowire-based photo-detector design are also examined.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Hu, Jun Hu, Yang Liu, Yang Liu, Alex Maslov, Alex Maslov, Cun-Zheng Ning, Cun-Zheng Ning, Robert Dutton, Robert Dutton, Sung-Mo Kang, Sung-Mo Kang, } "Simulation of p-n junction properties of nanowires and nanowire arrays", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681E (22 March 2007); doi: 10.1117/12.701210; https://doi.org/10.1117/12.701210

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