22 March 2007 Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates
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Abstract
In this work, the optical characteristics of monolithic passively mode-locked lasers (MLLs) fabricated from 1.24-&mgr;m InAs dots-in-a-Well (DWELL), 1.25-&mgr;m InGaAs single quantum well (SQW), and 1.55-&mgr;m GaInNAsSb SQW structures grown using elemental source molecular beam epitaxy (MBE) are reported. 5 GHz optical pulses with sub-picosecond RMS jitter, high pulse peak power (1W) and narrow pulse width (< 10 ps) were demonstrated in monolithic two-section InAs DWELL passive MLLs. With the 42% indium InGaAs SQW MLL, a record high-temperature performance for a monolithic passively mode-locked semiconductor laser is found. Compared with the typical operating range of the InAs DWELL devices (<60°C), the operation is in excess of 100 °C. The first 1.55-&mgr;m GaInNAsSb SQW MLL operates at a repetition rate of 5.8 GHz and has a 3-dB bandwidth of 170 kHz in the RF spectrum indicating respectable jitter.
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Y.-C. Xin, Y.-C. Xin, A. Stintz, A. Stintz, H. Cao, H. Cao, L. Zhang, L. Zhang, A. L. Gray, A. L. Gray, S. R. Bank, S. R. Bank, M. Osinski, M. Osinski, J. Harris, J. Harris, L. F. Lester, L. F. Lester, } "Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681L (22 March 2007); doi: 10.1117/12.705662; https://doi.org/10.1117/12.705662
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